射频前端产业观察
相比于碳化硅衬底，GaN on Silicon采用标准硅衬底，无疑在成本方面，会有巨大的优势。GaN on Silicon目前的性能怎么样？未来还有哪些需要突破的地方？本文展示了英飞凌在这方面的的一些突破和成就。
This article discussed the development of an RF GaN on Si technology for wireless infrastructure that improves the cost-performance value of GaN. After many years of GaN on Si development, the technology has matured to deliver its potential, providing efficiency on par with GaN on SiC at a lower cost based on Si wafer processing. This article has shown GaN on Si can meet the efficiency, linearization and power density requirements of 5G wireless communication systems. We believe this is the start of a longer journey, where further industry developments will push the capabilities of GaN on Si to higher frequencies and higher power levels, potentially expanding applications beyond wireless infrastructure.
本文引用自MicrowaveJournal的文章，所有版权归原作者所有。
